2SA1797G-B-AB3-R Transistor Datasheet & Specifications
PNP
SOT-89-3
General Purpose
UTC
VCEO
50V
Ic Max
2A
Pd Max
500mW
hFE Gain
200
Quick Reference
The 2SA1797G-B-AB3-R is a PNP bipolar transistor in a SOT-89-3 package by UTC. This datasheet provides complete specifications including 50V breakdown voltage and 2A continuous collector current. Download the 2SA1797G-B-AB3-R datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | UTC | Original Manufacturer |
| Package | SOT-89-3 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 50V | Breakdown voltage |
| Ic | 2A | Collector current |
| Pd | 500mW | Power dissipation |
| DC Current Gain | 200 | hFE / Beta |
| Frequency | 200MHz | Transition speed (fT) |
| VCEsat | 350mV | Saturation voltage |
| Vebo | 6V | Emitter-Base voltage |
| Cutoff Current | 100nA | Leakage (ICBO) |
| Temp | - | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| ZX5T955ZTA | PNP | SOT-89-3 | 140V | 3A | 2.1W |
| PBSS5360XX | PNP | SOT-89-3 | 60V | 3A | 1.35W |