2SA1362-GR,LF Transistor Datasheet & Specifications
PNP
TO-236-MOD
General Purpose
TOSHIBA
VCEO
15V
Ic Max
800mA
Pd Max
200mW
hFE Gain
120
Quick Reference
The 2SA1362-GR,LF is a PNP bipolar transistor in a TO-236-MOD package by TOSHIBA. This datasheet provides complete specifications including 15V breakdown voltage and 800mA continuous collector current. Download the 2SA1362-GR,LF datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | TOSHIBA | Original Manufacturer |
| Package | TO-236-MOD | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 15V | Breakdown voltage |
| Ic | 800mA | Collector current |
| Pd | 200mW | Power dissipation |
| DC Current Gain | 120 | hFE / Beta |
| Frequency | 120MHz | Transition speed (fT) |
| VCEsat | 200mV | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 100nA | Leakage (ICBO) |
| Temp | -55โ~+150โ | Operating temp |