2SA1163-GR,LF Transistor Datasheet & Specifications

PNP TO-236-3(SOT-23-3) General Purpose TOSHIBA
VCEO
120V
Ic Max
100mA
Pd Max
200mW
hFE Gain
700
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Quick Reference

The 2SA1163-GR,LF is a PNP bipolar transistor in a TO-236-3(SOT-23-3) package by TOSHIBA. This datasheet provides complete specifications including 120V breakdown voltage and 100mA continuous collector current. Download the 2SA1163-GR,LF datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerTOSHIBAOriginal Manufacturer
PackageTO-236-3(SOT-23-3)Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO120VBreakdown voltage
Ic100mACollector current
Pd200mWPower dissipation
DC Current Gain700hFE / Beta
Frequency100MHzTransition speed (fT)
VCEsat300mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-55℃~+125℃Operating temp

Equivalent Transistors & Alternatives

Sorry, we do not have any direct replacements for this part in our database at this time.
View all TO-236-3(SOT-23-3) PNP Transistors ›