2SA1162Y Transistor Datasheet & Specifications

PNP SOT-23 General Purpose JSCJ
VCEO
50V
Ic Max
150mA
Pd Max
150mW
hFE Gain
70

Quick Reference

The 2SA1162Y is a PNP bipolar transistor in a SOT-23 package by JSCJ. This datasheet provides complete specifications including 50V breakdown voltage and 150mA continuous collector current. Download the 2SA1162Y datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerJSCJOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO50VBreakdown voltage
Ic150mACollector current
Pd150mWPower dissipation
DC Current Gain70hFE / Beta
Frequency80MHzTransition speed (fT)
VCEsat-Saturation voltage
Vebo-Emitter-Base voltage
Cutoff Current-Leakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MMBT2907A-7-F PNP SOT-23 60V 600mA 350mW
FMMT560TA PNP SOT-23 500V 150mA 500mW
MMBTA92 PNP SOT-23 300V 500mA 300mW
ZXTP2025FTA PNP SOT-23 50V 5A 1.2W
ZXTP25100BFHTA PNP SOT-23 100V 2A 1.25W
FMMTA92TA PNP SOT-23 300V 200mA 310mW
PBSS5160T,215 PNP SOT-23 60V 1A 400mW
MMBT5401 PNP SOT-23 150V 500mA 225mW
MMBT2907A PNP SOT-23 60V 600mA 300mW
MMBT5401 PNP SOT-23 150V 600mA 300mW