2SA1162-GR(TE85LF Transistor Datasheet & Specifications
PNP
S-Mini
General Purpose
TOSHIBA
VCEO
50V
Ic Max
150mA
Pd Max
200mW
hFE Gain
400
Quick Reference
The 2SA1162-GR(TE85LF is a PNP bipolar transistor in a S-Mini package by TOSHIBA. This datasheet provides complete specifications including 50V breakdown voltage and 150mA continuous collector current. Download the 2SA1162-GR(TE85LF datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | TOSHIBA | Original Manufacturer |
| Package | S-Mini | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 50V | Breakdown voltage |
| Ic | 150mA | Collector current |
| Pd | 200mW | Power dissipation |
| DC Current Gain | 400 | hFE / Beta |
| Frequency | 80MHz | Transition speed (fT) |
| VCEsat | 300mV | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 100nA | Leakage (ICBO) |
| Temp | - | Operating temp |