2N6718G-B-AB3-R Transistor Datasheet & Specifications
NPN
SOT-89-3
General Purpose
UTC
VCEO
100V
Ic Max
1A
Pd Max
1W
hFE Gain
300
Quick Reference
The 2N6718G-B-AB3-R is a NPN bipolar transistor in a SOT-89-3 package by UTC. This datasheet provides complete specifications including 100V breakdown voltage and 1A continuous collector current. Download the 2N6718G-B-AB3-R datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | UTC | Original Manufacturer |
| Package | SOT-89-3 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 100V | Breakdown voltage |
| Ic | 1A | Collector current |
| Pd | 1W | Power dissipation |
| DC Current Gain | 300 | hFE / Beta |
| Frequency | 50MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -40℃~+125℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| FCX495TA-CN | NPN | SOT-89-3 | 150V | 1A | 1W |