2N6491 Transistor Datasheet & Specifications
PNP
TO-220C
High Power
SPTECH
VCEO
80V
Ic Max
15A
Pd Max
75W
hFE Gain
150
Quick Reference
The 2N6491 is a PNP bipolar transistor in a TO-220C package by SPTECH. This datasheet provides complete specifications including 80V breakdown voltage and 15A continuous collector current. Download the 2N6491 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | SPTECH | Original Manufacturer |
| Package | TO-220C | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 80V | Breakdown voltage |
| Ic | 15A | Collector current |
| Pd | 75W | Power dissipation |
| DC Current Gain | 150 | hFE / Beta |
| Frequency | 5MHz | Transition speed (fT) |
| VCEsat | 3.5V | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 1mA | Leakage (ICBO) |
| Temp | - | Operating temp |