2N5551TFR Transistor Datasheet & Specifications
NPN
TO-92-3L
General Purpose
onsemi
VCEO
160V
Ic Max
600mA
Pd Max
625mW
hFE Gain
80
Quick Reference
The 2N5551TFR is a NPN bipolar transistor in a TO-92-3L package by onsemi. This datasheet provides complete specifications including 160V breakdown voltage and 600mA continuous collector current. Download the 2N5551TFR datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | TO-92-3L | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 160V | Breakdown voltage |
| Ic | 600mA | Collector current |
| Pd | 625mW | Power dissipation |
| DC Current Gain | 80 | hFE / Beta |
| Frequency | 100MHz | Transition speed (fT) |
| VCEsat | 200mV | Saturation voltage |
| Vebo | 6V | Emitter-Base voltage |
| Cutoff Current | 50nA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| 2N5551TA | NPN | TO-92-3L | 160V | 600mA | 625mW |