2N5551S-RTK/P Transistor Datasheet & Specifications
NPN
SOT-23
General Purpose
KEC
VCEO
160V
Ic Max
600mA
Pd Max
350mW
hFE Gain
80
Quick Reference
The 2N5551S-RTK/P is a NPN bipolar transistor in a SOT-23 package by KEC. This datasheet provides complete specifications including 160V breakdown voltage and 600mA continuous collector current. Download the 2N5551S-RTK/P datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | KEC | Original Manufacturer |
| Package | SOT-23 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 160V | Breakdown voltage |
| Ic | 600mA | Collector current |
| Pd | 350mW | Power dissipation |
| DC Current Gain | 80 | hFE / Beta |
| Frequency | 300MHz | Transition speed (fT) |
| VCEsat | 200mV | Saturation voltage |
| Vebo | 6V | Emitter-Base voltage |
| Cutoff Current | 50nA | Leakage (ICBO) |
| Temp | - | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MMBT5551 | NPN | SOT-23 | 160V | 600mA | 250mW |
| MMBT5551 | NPN | SOT-23 | 160V | 600mA | 300mW |
| MMBT5551-TP | NPN | SOT-23 | 160V | 600mA | 300mW |
| MMBT5551-E | NPN | SOT-23 | 160V | 600mA | 300mW |
| MMBT5551 | NPN | SOT-23 | 160V | 600mA | 300mW |
| MMBT5551 | NPN | SOT-23 | 160V | 600mA | 300mW |
| MMBT5551(RANGE:200-300) | NPN | SOT-23 | 160V | 600mA | 300mW |
| MMBT5551 | NPN | SOT-23 | 160V | 600mA | 300mW |
| MMBT5551 | NPN | SOT-23 | 160V | 600mA | 300mW |
| MMBT5551 | NPN | SOT-23 | 160V | 600mA | 300mW |