2N5401YBU Transistor Datasheet & Specifications
PNP
TO-92-3L
General Purpose
onsemi
VCEO
150V
Ic Max
600mA
Pd Max
625mW
hFE Gain
120
Quick Reference
The 2N5401YBU is a PNP bipolar transistor in a TO-92-3L package by onsemi. This datasheet provides complete specifications including 150V breakdown voltage and 600mA continuous collector current. Download the 2N5401YBU datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | TO-92-3L | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 150V | Breakdown voltage |
| Ic | 600mA | Collector current |
| Pd | 625mW | Power dissipation |
| DC Current Gain | 120 | hFE / Beta |
| Frequency | 400MHz | Transition speed (fT) |
| VCEsat | 200mV | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 50uA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| 2N5401YTA | PNP | TO-92-3L | 150V | 600mA | 625mW |