2N5401 Transistor Datasheet & Specifications
PNP
TO-92
General Purpose
JSMSEMI
VCEO
150V
Ic Max
600mA
Pd Max
625mW
hFE Gain
150
Quick Reference
The 2N5401 is a PNP bipolar transistor in a TO-92 package by JSMSEMI. This datasheet provides complete specifications including 150V breakdown voltage and 600mA continuous collector current. Download the 2N5401 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | JSMSEMI | Original Manufacturer |
| Package | TO-92 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 150V | Breakdown voltage |
| Ic | 600mA | Collector current |
| Pd | 625mW | Power dissipation |
| DC Current Gain | 150 | hFE / Beta |
| Frequency | 300MHz | Transition speed (fT) |
| VCEsat | 500mV | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 50nA | Leakage (ICBO) |
| Temp | - | Operating temp |