2L-MMBT5401 Transistor Datasheet & Specifications

NPN SOT-23 General Purpose GOODWORK
VCEO
160V
Ic Max
600mA
Pd Max
300mW
hFE Gain
300

Quick Reference

The 2L-MMBT5401 is a NPN bipolar transistor in a SOT-23 package by GOODWORK. This datasheet provides complete specifications including 160V breakdown voltage and 600mA continuous collector current. Download the 2L-MMBT5401 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerGOODWORKOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO160VBreakdown voltage
Ic600mACollector current
Pd300mWPower dissipation
DC Current Gain300hFE / Beta
Frequency-Transition speed (fT)
VCEsat200mVSaturation voltage
Vebo-Emitter-Base voltage
Cutoff Current50nALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MMBT5551 NPN SOT-23 160V 600mA 250mW
MMBT5551 NPN SOT-23 160V 600mA 300mW
MMBT5551-TP NPN SOT-23 160V 600mA 300mW
MMBT5551-E NPN SOT-23 160V 600mA 300mW
MMBT5551 NPN SOT-23 160V 600mA 300mW
MMBT5551 NPN SOT-23 160V 600mA 300mW
MMBT5551(RANGE:200-300) NPN SOT-23 160V 600mA 300mW
MMBT5551 NPN SOT-23 160V 600mA 300mW
MMBT5551 NPN SOT-23 160V 600mA 300mW
MMBT5551 NPN SOT-23 160V 600mA 300mW