2DA1971-7 Transistor Datasheet & Specifications
PNP
SOT-89
General Purpose
DIODES
VCEO
400V
Ic Max
500mA
Pd Max
1.5W
hFE Gain
140
Quick Reference
The 2DA1971-7 is a PNP bipolar transistor in a SOT-89 package by DIODES. This datasheet provides complete specifications including 400V breakdown voltage and 500mA continuous collector current. Download the 2DA1971-7 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | SOT-89 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 400V | Breakdown voltage |
| Ic | 500mA | Collector current |
| Pd | 1.5W | Power dissipation |
| DC Current Gain | 140 | hFE / Beta |
| Frequency | 75MHz | Transition speed (fT) |
| VCEsat | 250mV | Saturation voltage |
| Vebo | 7V | Emitter-Base voltage |
| Cutoff Current | 100nA | Leakage (ICBO) |
| Temp | -55โ~+150โ | Operating temp |