20N06D MOSFET Datasheet & Specifications
N-Channel
PDFN-8(3x3)
Logic-Level
HL
Vds Max
60V
Id Max
20A
Rds(on)
28mΩ
Vgs(th)
2.5V
Quick Reference
The 20N06D is an N-Channel MOSFET in a PDFN-8(3x3) package, manufactured by HL. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 20A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HL | Original Manufacturer |
| Package | PDFN-8(3x3) | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 60V | Max breakdown voltage |
| Continuous Drain Current (Id) | 20A | Max current handling |
| Power Dissipation (Pd) | 34.7W | Max thermal limit |
| On-Resistance (Rds(on)) | 28mΩ | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.5V | Voltage required to turn on |
| Gate Charge (Qg) | 20.3nC@10V | Switching energy |
| Input Capacitance (Ciss) | 1.148nF | Internal gate capacitance |
| Output Capacitance (Coss) | 58.5pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |