13001 Datasheet & Equivalents
NPN
SOT-23
General Purpose
HXY MOSFET
VCEO
450V
Ic Max
200mA
Pd Max
300mW
hFE Gain
18
Quick Reference
The 13001 is a NPN bipolar junction transistor in a SOT-23 package, manufactured by HXY MOSFET. It supports a breakdown voltage of 450V and continuous collector current of 200mA. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HXY MOSFET | Original Manufacturer |
| Package | SOT-23 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 450V | Max breakdown voltage |
| Collector Current (Ic) | 200mA | Max current handling |
| Power Dissipation (Pd) | 300mW | Max thermal limit |
| DC Current Gain (hFE) | 18 | Base signal amplification ratio |
| Transition Frequency (fT) | 8MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 400mV | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 7V | Max emitter-base breakdown |
| Collector Cutoff Current | 100uA | Leakage current when OFF |
| Operating Temp | - | Safe junction temperature range |