100N03DF MOSFET Datasheet & Specifications

N-Channel PDFN3x3 Logic-Level GOODWORK
Vds Max
30V
Id Max
100A
Rds(on)
3.3mΩ@10V
Vgs(th)
1.5V

Quick Reference

The 100N03DF is an N-Channel MOSFET in a PDFN3x3 package, manufactured by GOODWORK. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 100A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerGOODWORKOriginal Manufacturer
PackagePDFN3x3Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)30VMax breakdown voltage
Continuous Drain Current (Id)100AMax current handling
Power Dissipation (Pd)62.5WMax thermal limit
On-Resistance (Rds(on))3.3mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))1.5VVoltage required to turn on
Gate Charge (Qg)45nC@10VSwitching energy
Input Capacitance (Ciss)3.45nFInternal gate capacitance
Output Capacitance (Coss)330pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
No exact equivalents found in database.